RTP (Rapid thermal Processing) technique

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چکیده

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Thermal Model of Rapid Thermal Processing Systems

Continuously shrinking device parameters and the enlargement of wafer diameters in semiconductor industry require best temperature homogeneity in Rapid Thermal Processing (RTP). This together with the requirement of high ramp rates in the range of 200 °C s as advantageously used in ultra shallow junction processes [1] challenges temperature control in RTP technology. In order to design advanced...

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Rapid thermal processing of magnetic materials

The rapid thermal processing (RTP) technique features dynamic control of temperature, which permits high heating and cooling rates that cannot be reached with conventional furnace treatments. In recent years, RTP has been increasingly applied to the processing of magnetic materials. The controllable heating profiles provide an approach for the deliberate construction of materials structure via ...

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Rapid thermal processing of self-assembling block copolymer thin films.

Self-assembling block copolymers generate nanostructured patterns which are useful for a wide range of applications. In this paper we demonstrate the capability to control the morphology of the self-assembling process of PS-b-PMMA diblock copolymer thin films on unpatterned surfaces by means of fast thermal treatment performed in a rapid thermal processing machine. The methodology involves the ...

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Rapid Thermal Processing of Silicon Wafers with Emissivity Patterns

Fabrication of devices and circuits on silicon wafers creates patterns in optical properties, particularly the thermal emissivity and absorptivity, that lead to temperature nonuniformity during rapid thermal processing (RTP) by infrared heating methods. The work reported in this paper compares the effect of emissivity test patterns on wafers heated by two RTP methods: (1) a steadystate furnace ...

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ژورنال

عنوان ژورنال: Journal of the Illuminating Engineering Institute of Japan

سال: 1991

ISSN: 0019-2341,1349-838X,2185-1506

DOI: 10.2150/jieij1980.75.appendix_239